smd type ic www.kexin.com.cn 1 smd type ic n- and p-channel 12-v (d-s) mosfet KI7540DP features trenchfet power mosfet pwm optimized for high efficiency absolute maximum ratings t a =25 10 secs steady state 10 secs steady state drain-source voltage v ds v gate-source voltage v gs v continuous drain current (t j = 150 )* t a =25 11.8 7.6 -8.9 -5.7 a t a =70 9.5 6.1 -7.1 -4.6 a pulsed drain current i dm a continuous source current (diode conduction)* i s 2.9 1.1 -2.9 -1.1 a maximum power dissipation* t a =25 3.5 1.4 3.5 1.4 w t a =70 2.2 0.9 2.2 0.9 w operating junction and storage temperature range t j ,t stg *surface mounted on 1" x 1" fr4 board. parameter i d p d unit symbol n-channel p-channel 12 -12 8 8 20 -55to150 thermal resistance ratings typ max typ max t 10 sec 26 35 26 35 steady state 60 85 60 85 maximum junction-to-case (drain) steady state r thjc 3.9 5.5 3.9 5.5 *surface mounted on 1" x 1" fr4 board. unit parameter r thja maximum junction-to-ambient* /w n-channel p-channel symbol
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics t j =25 parameter symbol min typ max unit v ds =v gs ,i d =250 a n-ch 0.6 1.5 v ds =v gs ,i d = -250 a p-ch -0.6 -1.5 v ds =0vv gs = 8v n-ch 100 v ds =0vv gs = 8v p-ch 100 v ds =9.6v,v gs =0v n-ch 1 v ds = -9.6v, v gs =0v p-ch -1 v ds =20v,v gs =0v,t j =55 n-ch 5 v ds = -20v, v gs =0v,t j =55 p-ch -5 v ds 5v,v gs =4.5v n-ch 20 v ds -5 v, v gs =-4.5v p-ch -20 v gs =4.5v,i d = 11.8a n-ch 0.014 0.017 v gs =-4.5v,i d = -8.9a p-ch 0.026 0.032 v gs =2.5v,i d = 9.8a n-ch 0.020 0.025 v gs =-2.5v,i d = -6.9a p-ch 0.043 0.053 v ds =5v,i d = 11.8a n-ch 32 v ds =-5v,i d = -8.9a p-ch 23 i s =2.9a,v gs = 0 v n-ch 0.77 1.2 i s = -2.9a, v gs = 0 v p-ch -0.8 -1.2 n-channel n-ch 11.5 17 v ds =6v,v gs =4.5v,i d = 11.8a p-ch 13 20 n-ch 3.2 p-channel p-ch 4.1 v ds =-6v,v gs =-4.5v,i d = -8.9a n-ch 2.5 p-ch 1.9 n-ch 1.7 p-ch 3.5 n channel n-ch 30 45 v dd =6v,r l =6 p-ch 35 55 i d =1a,v gen =4.5v,r g =6 n-ch 50 75 p-ch 42 65 p-channel n-ch 60 90 v dd =-6v,r l =6 p-ch 54 85 i d =-1a,v gen =-4.5v,r g =6 n-ch 25 40 p-ch 17 30 i f =2.9 a, d i /d t = 100 a/ s n-ch 40 80 i f =-2.9a,d i /d t =100a/ s p-ch 40 80 * pulse test; pulse width 300 s, duty cycle 2%. r ds(on) drain source on state resistance* diode forward voltage* total gate charge v sd g fs forward transconductance* rise time testconditons q g gate threshold voltage gate body leakage zero gate voltage drain current i d(on) on state drain currenta v na a v gs( th) i gss i dss a s v source-drain reverse recovery time t rr ns t d(on) t r t d( off) t f fall time turn on time turn off delay time gate resistance r g nc gate source charge gate drain charge q gs q gd KI7540DP
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